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1T-SRAM is a pseudo-static random-access memory (PSRAM) technology introduced by MoSys, Inc. in September 1998, which offers a high-density alternative to traditional static random-access memory (SRAM) in embedded memory applications. Mosys uses a single-transistor storage cell like dynamic random-access memory (DRAM), but surrounds the bit cell with control circuitry that makes the memory functionally equivalent to SRAM. 1T-SRAM has a standard single-cycle SRAM interface and appears to the surrounding logic just as an SRAM would.
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