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Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1−xAs), is a ternary III-V semiconductor compound with very nearly the same lattice constant as InGaAs, but a larger bandgap. It can be considered as an alloy between aluminium arsenide (AlAs) and indium arsenide (InAs). AlInAs refers generally to any composition of the alloy.
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