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Ballistic electron emission microscopy or BEEM is a technique for studying ballistic electron transport through a variety of materials and material interfaces. BEEM is a three terminal scanning tunneling microscopy (STM) technique that was invented in 1988 at the Jet Propulsion Laboratory in Pasadena, California by L. Douglas Bell, Michael H. Hecht, and William J. Kaiser. The most popular interfaces to study are metal–semiconductor Schottky diodes, but metal–insulator–semiconductor systems can be studied as well.
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